Slides
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1 Company Profile World-class leading edge with MOCVD
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2 Core Technology MOCVD（有機金屬氣相沉積法） - Metal Organic Chemical Vapor Deposition
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3 Through the organic metal chemical vapor deposition method, the semiconductor film is grown on the substrate, and the epitaxial layer is accurately controlled through the real-time monitoring of the machine to complete the production of epitaxial wafers for different products such as GaAs 、 InP and GaN. The epitaxial layer is heated by MOCVD in the cavity of the substrate, and an atomic layer is stacked layer by layer to form an epitaxial layer. MOCVD Metal Organic Chemical Vapor Deposition Production Reactor Way to Produce Production Principle Core Technology
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4 Semiconductor（by Material） Period Column II III IV V VI 2 Be 鈹 Beryllium B 硼 Boron C 碳 Carbon N 氮 Nitrogen O 氧 Oxygen 3 Mg 鎂 Magnesium Al 鋁 Aluminum Si 矽 Silicon P 磷 Phosphorus S 硫 Sulfur 4 Zn 鋅 Zinc Ga 鎵 Gallium Ge 鍺 Germanium As 砷 Arsenic Se 硒 Selenium 5 Cd 鎘 Cadmium In 銦 Indium Sn 錫 Tin Sb 銻 Antimony Te 碲 Tellurium 6 Hg 汞 Mercury Tl 鉈 Thallium Pb 鉛 Lead 二元化合物 Binary : GaAs, InP, GaP,GaN, etc. 三元化合物 Ternary : InGaAs, InGaP, AlGaAs, etc. 四元化合物 Quaternary : AlGaInP, InGaAsP, etc. 五元化合物 Pentanary : AlGaInAsN, etc. Semiconductor GaAs, InP, GaN, GaP, GaSb... Element Si ,Ge Compound III-V IV-IV II-VI SiC, SiGe ZnSe, ZnS, CdS, etc.
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5 TMAl Tri - Methyl - Aluminum ( CH3 )3Al 三 甲基 鋁 Al CH3 CH3CH3 TEAl : Tri-ethyl-Aluminum ( C2H5 )3Al TMGa : Tri-Methyl-Gallium ( CH3 )3 Ga TMIn : Tri-Methyl-Indium ( CH3 )3In DETe : Di-ethyl-Tellurium ( C2H5 )2Te DEZn : Di-ethyl-Zinc ( C2H5 )2Zn CP2Mg : Bis (cyclo-penta-dienyl ) Magnesium 環戊二烯鎂 AsH3 : Arsine PH3 : Phosphine SiH4 : Silane Si2H6 : Disiline H2Se : Hydrogen Selenide CBr4 : Carbon Tetrabromide 化學反應式： 主要原物料: MO Source + Hydride + Carrier Gas：H2 Chemical Reaction During Epitaxy
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6 Advantages of Compoundsemiconductor 1. High Electron Mobility (5.7x higher than CM0S) 2. High Frequency Response 3. Wide Band Width 4. High Linearity 5. High Power 6. Alternative Choice of Material 7. Anti-radiation 適用於微電子產品－HBT、pHEMT、BiHEMT、GaN on XX 光電子產品－ PIN（PD、APD）、VCSEL、LD、SC、 CW-Laser、 GaN on XX
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7 Wireless Communication 2~6 ”GaAs Substrate MOCVD Reactor IC Package & Testing Microelectronics IC Process Substrate GaAs Epi- Wafer 磊晶片 Sumitomo, Freiberger, AXT IDM：Qorvo, Skyworks Foundry： WIN, AWSC VPEC is a Pure Epi Provider Fabless ：Avago, Qualcomm, Richwave, GaAs in Wireless Communication Supply Chain
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8 Optoelectronic Products Industry Supply Chain AI Data center 2~4 ”InP Substrate MOCVD Reactor Optical Transceiver Optoelectronics IC Process Substrate InP Epi- Wafer 磊晶片 AXT, Freiberger, JX VPEC is a Pure Epi Provider
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9 2023-2026 H1 Financial Result 2026 H1 % 2025 % 2024 % 2023 % Revenue 1,924,683 100% 3,380,143 100% 3,241,217 100% 2,694,104 100% Gross margin 738,137 38% 1,219,726 36% 1,278,964 39% 1,108,914 41% Operating Profit 450,464 23% 669,263 20% 721,214 22% 542,069 20% Non- operating income & expense 29,836 2% -1,912 0% 96,460 3% -347 0% Tax -71,627 -4% -119,409 -4% -146,619 -5% -91,490 -3% Net income 408,673 21% 547,942 16% 671,055 21% 450,232 17% EPS 2.20 2.97 3.63 2.43
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VPEC Proprietary and Confidential 10 2027 Outlook Wireless RF 03 04 01 02 5G Mobile Penetration 的内容入您的内容输入您的内 容输入您的内容输入您的内容 内容输入您的内容. WiFi 7 V2X IoT Smart Link (4G PA)
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VPEC Proprietary and Confidential 11 2027 Outlook Opto electronics 03 04 01 02 Data Center High Speed Connectivity 3D-sening AR/VR Future Driving Engines Car LiDAR (LD/PD) PD for 800G VCSEL for 400G & 800G 機器視覺 LEO Solar Cell P-sensor、3D Sensing 、 ToF VCSEL VCSEL / PD AI glass HAMR HDD UAV
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VPEC Proprietary and Confidential Awakening the AI Terminals: Sense, Compute, Move 12Source：Copilot